A fully analytical model to describe the high-frequency behavior of p-i-n photodiodes

This paper presents a novel fully analytical model describing the high-freq uency, behavior of p-i-n photodiodes. The transport equations are solved, t aking into account the dependence of the carrier velocities on the electric field, while the RC-product effect is considered by, adding the displaceme nt current in the current equations. The model yields a full), analytical e xpression for both the bandwidth and quantum efficiency, as a function of e lectrical and geometrical photodiode parameters, as well as material proper ties. (C) 2001 John Wiley & Sons, Inc.