Admittance parameter and unilateral power-gain evaluation of GaN MESFET for microwave circuit applications

The admittance parameters and unilateral power gain of a nonself-aligned Ga N MESFET incorporating the parasitic elements along with gate-length modula tion are evaluated analytically in the present model. The cutoff frequency of the maximum available gain and the maximum frequency of oscillation are also determined in the model. For a GaN MESFET (4 mum x 100 mum), the maxim um frequency of oscillation is obtained to be about 2 GHz at zero gate bias . Using the present model, a unilateral power gain of 18 dB is predicted fo r the device. (C) 2001 John Wiley & Sons, Inc.