A memory/adder model based on single C-60 molecular transistors

Citation
R. Stadler et al., A memory/adder model based on single C-60 molecular transistors, NANOTECHNOL, 12(3), 2001, pp. 350-357
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOTECHNOLOGY
ISSN journal
09574484 → ACNP
Volume
12
Issue
3
Year of publication
2001
Pages
350 - 357
Database
ISI
SICI code
0957-4484(200109)12:3<350:AMMBOS>2.0.ZU;2-4
Abstract
A recent proposal, in which 1-bit memory cells and simple logic gates such as NOT and NOR gates were based on C-60 molecules in an electromechanical g rid acting as transistors, is extended to larger architectures. In order to meet the requirements of standard digital circuit architectures, some modi fications have to be made compared to the original model. For example, the number of transistors has to be increased from two to thirteen for a single NOR gate to guarantee balanced logical levels. In the scheme employed to a chieve this in the current work, all two-input gates, namely OR, AND and XO R gates, can be easily constructed using the same concept. These gates are then used to design a 1-bit full-adder and a clocked D-latch, which are the n combined with the earlier proposed 1-bit memory cell as the basic constit uents of a memory/adder model. Clocked signal transmissions, corresponding to the read process of two 2-bit words from memory cells, their movement th rough registers and finally their addition and passing the output through a nother register, are simulated using the electrical circuit software SPICE. For the design of this memory/adder circuit, 464 single C-60 transistors a re used.