Can silicon dimers form logic gates?

Authors
Appelbaum, I Wang, TR Fan, SH Joannopoulos, JD Narayanamurti, V
Citation
I. Appelbaum et al., Can silicon dimers form logic gates?, NANOTECHNOL, 12(3), 2001, pp. 391-393
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOTECHNOLOGY
ISSN journal
09574484 → ACNP
Volume
12
Issue
3
Year of publication
2001
Pages
391 - 393
Database
ISI
SICI code
0957-4484(200109)12:3<391:CSDFLG>2.0.ZU;2-7
Abstract
We have performed density functional theory calculations to show how a tung sten scanning probe can mediate the interactions between bistable Si(100) s urface dimers. Interpreting the state of each dimer as a bit of information , we demonstrate the use of this mediated interaction to construct a NOR lo gic gate.