Microstructure and photoluminescence spectra of porous InP

Authors
Liu, AM
Citation
Am. Liu, Microstructure and photoluminescence spectra of porous InP, NANOTECHNOL, 12(3), 2001, pp. L1-L3
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOTECHNOLOGY
ISSN journal
09574484 → ACNP
Volume
12
Issue
3
Year of publication
2001
Pages
L1 - L3
Database
ISI
SICI code
0957-4484(200109)12:3<L1:MAPSOP>2.0.ZU;2-A
Abstract
Photoluminescence (PL) of porous InP formed by electrochemical etching tech niques is measured at room temperature. Compared to the PL of the bulk InP wafer, a blueshifted PL emission is observed. It is found that the amount o f the blueshifted energy depends on the microstructure of porous InP, which in turn strongly depends on the potential voltage applied during the elect rochemical etching. Time-resolved PL study of the sample shows that surface nonradiative recombination is dominant.