Charge transfer in photorefractive CdTe : Ge at different wavelengths

Citation
K. Shcherbin et al., Charge transfer in photorefractive CdTe : Ge at different wavelengths, OPT MATER, 18(1), 2001, pp. 151-154
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
OPTICAL MATERIALS
ISSN journal
09253467 → ACNP
Volume
18
Issue
1
Year of publication
2001
Pages
151 - 154
Database
ISI
SICI code
0925-3467(200110)18:1<151:CTIPC:>2.0.ZU;2-6
Abstract
The charge transfer processes in photorefractive CdTe:Ge were modeled using the data of optical absorption, magnetic circular dichroism (MCD) and elec tron paramagnetic resonance (EPR) spectroscopies. Within the developed mode l the variations in the photorefractive properties of different CdTe:Ge sam ples are explained by differences in the relative concentrations of donor a nd trap centers. The existence of two different centers of comparable conce ntrations, each in two charge states, allows charge redistribution between them and gives rise to optical sensitization of some CdTe:Ge samples for ph otorefractive recording under an auxiliary illumination. In the present art icle we follow the proposal of pseudo-3D presentation of light-induced abso rption to distinguish the main charge transfer processes at different excit ation energies and explain the sensitization of CdTe:Ge for photorefractive recording at 1.06, 1.32 and 1.55 mum by light with appropriate wavelength. (C) 2001 Elsevier Science B.V. All rights reserved.