DX centers in indium-doped Cd0.9Mn0.1Te

Deep levels in indium-doped Cd0.9Mn0.1Te material were studied by DLTS, the rmally stimulated capacitance (TSC) and photocapacitance measurements. The persistent photoeffects observed at low temperature indicate existence of m etastable centers in the material. One of the trap related to metastable de fects has been identified: the level with activation energy obtained from D LTS studies equal to 0.22 eV, a very high concentration of the associated t raps (higher than 10% of the concentration of the shallow levels) and energ y barrier for capture equal to 0.1 eV. Stokes shift for this level has been found to be equal to 0.58 eV. (C) 2001 Elsevier Science B.V. All rights re served.