Excitonic resonant photorefractive devices around 1.06 mu m

Authors
Shimura, T Iwamoto, S Kageshima, H Taketomi, S Nishioka, M Someya, T Arakawa, Y Fukutani, K Kuroda, K
Citation
T. Shimura et al., Excitonic resonant photorefractive devices around 1.06 mu m, OPT MATER, 18(1), 2001, pp. 183-185
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
OPTICAL MATERIALS
ISSN journal
09253467 → ACNP
Volume
18
Issue
1
Year of publication
2001
Pages
183 - 185
Database
ISI
SICI code
0925-3467(200110)18:1<183:ERPDA1>2.0.ZU;2-O
Abstract
InGaAs/GaAs multiple quantum well (MQW) photorefractive devices that have t he sensitivity around the wavelength of 1.06 mum are fabricated and some ch aracteristics are measured. Saturation intensity is 3.6 mW/cm(2) and cut of f grating pitch is 1.4 mum. These values show that this device is usable in practical applications using Nd:YAG lasers. A vibration measurement system using two-wave mixing is also demonstrated. (C) 2001 Elsevier Science B.V. All rights reserved.