Investigation of localized and conventional photoluminescence, in an asymmetric quantum well

Conventional and localized photoluminescence (PL) are investigated in an n- type asymmetrically doped InGaAs/InP quantum well (OW), using focused laser -beam excitation. We observed a novel red shift in the PL spectra and also the presence of an additional transition, under high optical excitation int ensity We provide evidence that these observations are related to the occur rence of photocarrier accumulation in the QW in a process distinct from the well-known optical control of the electron accumulation.