In this work, we electrodeposited the soft magnetic alloy Co-P on (100) n-t
ype silicon substrates. The depositions were carried out potentiostatically
in a three-electrode cell. The Co-P thin films were characterized by diffe
rent experimental techniques, i.e., Rutherford backscattering, magnetooptic
al Kerr effect, X-ray diffraction and scanning electron microscopy combined
with energy dispersive spectroscopy. Co-P layers with thicknesses up to 11
00 mn, deposited at 75 degreesC, at an applied potential between -1.2 and -
1.5 V/SCE, showed metallic appearance with granular, compact and uniform mo
rphology. The phosphorous content of films remained between 15 and 24 at% s
howing slowly decreasing values with increasing layer thickness. Diffractio
n measurements displayed no crystalline peaks and Kerr magnetometry showed
a transition thickness at 600 nm below which in-plane magnetization is obse
rved.