Recent developments in scanning transmission electron microscopy (STEM) now
make it routinely possible to obtain direct images and spectra from interf
ace and defects structures with atomic spatial resolution. Here we describe
the experimental conditions required to set-up and align a 200 kV STEM/TEM
microscope to perform this analysis. The various imaging and analysis tech
niques will be illustrated with examples from interfaces in H-VI and III-V
quantum dot systems and dislocation cores in GaN.