Probing interface electronic structure with overlayer quantum-well resonances: Al/Si(111) - art. no. 156801

The dispersion of quantum-well resonances in ultrathin epitaxial Al films o n Si(111) reveals energy- and wave vector-dependent reflection properties a t the Al/Si inter-face. The substrate electronic structure strongly influen ces the phase shift of the electron waves upon reflection at the interface. Thus the details of the substrate electronic structure need to be taken in to account for a complete analysis of metallic quantum-well resonances. Fur thermore, the assumption of loss of parallel wave vector information upon r eflection or transmission through a lattice-mismatched interface is challen ged. The changes induced in the electronic structure of the overlayer can b e used to probe the ground-state substrate band edges.