Switching of In-111 impurity sites in the HfAl2 lattice

Citation
P. Wodniecki et al., Switching of In-111 impurity sites in the HfAl2 lattice, PHYS LETT A, 288(3-4), 2001, pp. 227-230
Citations number
16
Categorie Soggetti
Physics
Journal title
PHYSICS LETTERS A
ISSN journal
03759601 → ACNP
Volume
288
Issue
3-4
Year of publication
2001
Pages
227 - 230
Database
ISI
SICI code
0375-9601(20010924)288:3-4<227:SOIISI>2.0.ZU;2-8
Abstract
Perturbed angular correlation measurements in the HfAl2 C14-type Laves phas e exhibit a very surprising temperature behavior of the ion-implanted In-11 1 probe atoms. Below 370 K the In-111 impurities are located at the unique hafnium site. Above 400 K they occupy the two aluminum sites, however with a clear preference of the 2(a) site. This process, which is fully reversibl e when heating and cooling the sample, is attributed to atomic size effects . (C) 2001 Elsevier Science B.V. All rights reserved.