Using a segmented-contact method, we have measured the optical mode loss in
a series of AlGaInP 650 mn large optical cavity laser diodes with cladding
layer thicknesses of 1.0, 0.5 and 0.3 mum. For the thinnest cladding layer
the loss is 24 cm(-1), greater than the other devices and by comparison wi
th transfer matrix calculations we show that this is due to penetration of
the mode into the outer GaAs layers. The results show that the cladding thi
ckness can be reduced to about 0.5 mum without significant increase in loss
and threshold current and this could be beneficial in reducing, the electr
ical and thermal resistance of the cladding layer in high power structures.