Devices dictate control of implant-beam incident angle

As device scaling continues, precise control of dopant placement becomes a critical requisite in the fabrication of high-performance devices. Here we compare the performance of single-wafer parallel-beam implanters to traditi onal batch implanters, with spinning disks, looking at beam incident angle control. There are several sources of beam incident angle variation in batc h implanters, depending upon the scanning system and beam delivery mechanis m. The consequences of these sources of angular variations are crucial in h igh-performance device fabrication.