Properties of HgCdTe crystals passivated by A(2)B(6) layers

Authors
Virt, I Bilyk, M Stefaniuk, I Kuzma, M
Citation
I. Virt et al., Properties of HgCdTe crystals passivated by A(2)B(6) layers, SOL ST ELEC, 45(10), 2001, pp. 1743-1746
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
10
Year of publication
2001
Pages
1743 - 1746
Database
ISI
SICI code
0038-1101(200110)45:10<1743:POHCPB>2.0.ZU;2-X
Abstract
The effect of A(2)B(6) passivating layers on properties of bulk p-Hg1-xCdxT e crystals has been studied. CdTe, ZnTe and US layers with 400 nm thickness were grown on the surface of a sample by a pulse laser deposition (PLD) me thod. The galvanomagnetic and photoelectric properties of the passivated cr ystals were measured. Accordingly, the layers have only a weak influence on the properties of the crystals. The electrical properties of the related A l-CdTe-Hg0.8Cd0.2Te and Al-CdS-Hg0.8Cd0.2Te heterostructures obtained by PL D method have been studied too. (C) 2001 Published by Elsevier Science Ltd.