Hall effect measurements in double-gate SOI MOSFETs

The electron mobility and concentration in double-gate silicon-on-insulator (SOI) gate-all-around transistors is extracted by Hall effect measurements at room and liquid nitrogen temperature. The Hall mobility is compared wit h the drift mobility determined from the transconductance measurement of th e devices in strong inversion. The results of this study indicate that the method based on I-D/(g(m))(0.5) provides acceptable values for the drift mo bility. The experiment reveals high carrier mobility dominated at room temp erature by a phonons scattering mechanism and at low temperature by mixed s cattering processes, with a predominance of the surface roughness scatterin g mechanism. No evidence was found for special transport mechanisms induced by volume inversion in relatively thick SOI films. (C) 2001 Elsevier Scien ce Ltd. All rights reserved.