Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct optical injection

Authors
Kahn, M Lasri, J Orenstein, M Ritter, D Eisenstein, G
Citation
M. Kahn et al., Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct optical injection, SOL ST ELEC, 45(10), 2001, pp. 1827-1830
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
10
Year of publication
2001
Pages
1827 - 1830
Database
ISI
SICI code
0038-1101(200110)45:10<1827:POAIRT>2.0.ZU;2-4
Abstract
Optical-injection locking of an InP based resonant tunneling diode relaxati on oscillator is demonstrated. The diode is an Al-free InP/InGaP/InGaAs str ucture. The characteristics of the fundamental oscillating line and its har monic, including their phase noise are reported. (C) 2001 Elsevier Science Ltd. All rights reserved.