Degradation processes in the aluminum-silicon system induced by pulsed electric signals

Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulse s with a current density of j = (1-8) x 10(10) A/m(2) and a duration of tau = 50-800 mus. Mechanisms of the irreversible degradation in the aluminum-s ilicon contact under the pulsed current action are established. The degrada tion is manifested by the contact melting and the metallization layer fusio n. Methods for the identification of these phenomena and determination of t he critical current densities j(k) are proposed. The critical current densi ty depends on the current pulse duration as described by the relationship j (k) similar to 1/(4)root tau. It is established that the passage of single current pulses with j greater than or equal to 5 x 10(10) A/m(2) and tau gr eater than or equal to 200 mus leads to the formation of linear defects in the region of maximum temperature gradient in the test structure. (C) 2001 MAIK "Nauka/Interperiodica".