Investigation of the process of voltage distribution over elements of a high-power semiconductor current interrupter

The process of voltage distribution over serially connected elements of a h igh-power semiconductor current interrupter in the stage of current breakag e is studied within the framework of a previously developed physicomathemat ical model. It is established that a mechanism is operative that provides f or the voltage drop leveling between unit structures of the p(+)-p-n-n(+) t ype with various depths X-p of the p-n junctions. The mechanism is related to the fact that the formation of a strong field region on the stage of cur rent breakage in the unit structures with larger X-p begins later, but the expansion of this region proceeds faster than the same processes in the uni ts with smaller X-p . (C) 2001 MAIK "Nauka/Interperiodica".