The effect of the irradiated glass target temperature on the implanted silver distribution profile

Authors
Citation
Al. Stepanov, The effect of the irradiated glass target temperature on the implanted silver distribution profile, TECH PHYS L, 27(10), 2001, pp. 862-864
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
10
Year of publication
2001
Pages
862 - 864
Database
ISI
SICI code
1063-7850(2001)27:10<862:TEOTIG>2.0.ZU;2-T
Abstract
Features of the profiles of silver ions implanted into a soda-lime silicate glass were studied depending on the substrate temperature varied in a narr ow range from 20 to 100 degreesC. The implant depth-concentration profiles were modeled with an allowance for a thermostimulated increase in the diffu sion mobility of the implanted impurity in the sample volume. It is shown t hat an increase in the substrate temperature by several tens of degrees lea ds to a diffusion smearing of the implanted impurity profile and, hence, to a decrease in the local implant concentration hindering the metal silver n ucleation. An analysis of the results of modeling points to the need in tho roughly controlling the substrate temperature in order to provide for the r equired conditions of the metal nanoparticle synthesis and to obtain the me tal-glass composites with reproducible characteristics. (C) 2001 MAIK "Nauk a/Interperiodica".