A new method for determining the sharpness of InGaAs/GaAs heterojunctions by auger depth profiling

Authors
Drozdov, MN Danil'tsev, VM Drozdov, YN Khrykin, OI Shashkin, VI
Citation
Mn. Drozdov et al., A new method for determining the sharpness of InGaAs/GaAs heterojunctions by auger depth profiling, TECH PHYS L, 27(10), 2001, pp. 868-870
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
10
Year of publication
2001
Pages
868 - 870
Database
ISI
SICI code
1063-7850(2001)27:10<868:ANMFDT>2.0.ZU;2-P
Abstract
It is established for the first time that the phenomenon of ion-stimulated surface segregation can be used to increase the depth resolution of Auger p rofiling during analysis of the InxGa1 - xAs/GaAs heterostructures. It is d emonstrated that, by varying the energy of the sputtering Ar+ ion beam from 1 to 0.5 keV in the region of the GaAs/InGaAs heterojunction, the junction sharpness can be estimated at a resolution on the order of 0.5 nm determin ed by a difference in the projected range of Ar+ ions and independent of th e escape depth of the Auger electrons. (C) 2001 MAIK "Nauka/Interperiodica" .