Simulation of saturation effects in electroabsorption modulators

Saturation phenomena have a deep impact on the performance of electroabsorp tion (EA) modulators. It is important to develop algorithms which as well d escribe the phenomenon of electroabsorption as they include nonlinear carri er dependent effects, band filling and reduction of the band gap. Thus, a d ynamical transport model has to be coupled to the density matrix equation f or excitons. The density matrix equation for interband processes determines quantum opti cal effects, while a drift-diffusion model (DDM) adequately describes trans port phenomena in the device. Within this approach quantum transport is con sidered by a correction of the classical potential, the Bohm potential. To demonstrate the presented algorithm, waveguide EA-modulators including stra ined lattice and full Fermi statistics are investigated.