Electron-beam-induced densification of Ge-doped flame hydrolysis silica for waveguide fabrication

Citation
Sg. Blanco et al., Electron-beam-induced densification of Ge-doped flame hydrolysis silica for waveguide fabrication, APPL PHYS L, 79(18), 2001, pp. 2889-2891
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
18
Year of publication
2001
Pages
2889 - 2891
Database
ISI
SICI code
0003-6951(20011029)79:18<2889:EDOGFH>2.0.ZU;2-G
Abstract
Experimentally we compare the densification induced by electron beam irradi ation of Ge-doped silica, produced by flame hydrolysis deposition with the densification of thermally produced SiO2. By comparing these results to the predictions made by elasticity theory, we find good agreement for the ther mal SiO2 by considering a single region of electron beam damage. For the Ge -doped flame-hydrolysis-deposited silica, we need to include in the model a second, shallow region, which densifies to a greater extent. X-ray photoel ectron spectroscopy measurements suggest that the thickness of this additio nal region is comparable to a layer that was found to be depleted of Ge. (C ) 2001 American Institute of Physics.