Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates

We have characterized the growth of GaN on both SiC and Si (111) using the cantilever epitaxy technique. Cantilever epitaxy employs growth from period ic, parallel mesas which are formed by etching the substrate [C.I.H. Ashby Appl. Phys. Lett. 77, 3233 (2000)]. GaN/AlN/Si and GaN/AlN/SiC layers were grown via metalorganic chemical vapor deposition on substrates with reactiv e ion etched trenches. This single step approach allows GaN to laterally ov ergrow the substrate trenches yielding low defect density material over the trench, while avoiding use of a mask which is commonly employed in lateral epitaxial overgrowth. Scanning electron microscopy, atomic force microscop y, and x-ray diffraction were used to characterize the resulting material. Significant threading dislocation reduction was observed in the "wing" regi ons (the material directly over the trenches). Contrary to previous reports , crystallographic wing tilt ranging from 0.22 degrees to 0.77 degrees was also observed, despite the absence of a wing/mask interface using this tech nique. (C) 2001 American Institute of Physics.