Electric field-induced junctions in epitaxial layers of CuInSe2

Epitaxial films of CuInSe2 on Si(111) were modified by the application of a n electric field through a movable tip. The electric field induces stable j unction regions which are identified by efficient separation and collection of electron beam-induced charge carriers. The movable tip allows for scrib ing of these junction regions. The junctions can be explained by symmetrica l p/p(+)/n/p(+)/p regions formed within the CuInSe2 epilayers. The reported method presents an alternate way for junction patterning in two dimensions . (C) 2001 American Institute of Physics.