Defect annealing in Cu(In,Ga)Se-2 heterojunction solar cells after high-energy electron irradiation

Authors
Jasenek, A Schock, HW Werner, JH Rau, U
Citation
A. Jasenek et al., Defect annealing in Cu(In,Ga)Se-2 heterojunction solar cells after high-energy electron irradiation, APPL PHYS L, 79(18), 2001, pp. 2922-2924
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
18
Year of publication
2001
Pages
2922 - 2924
Database
ISI
SICI code
0003-6951(20011029)79:18<2922:DAICHS>2.0.ZU;2-X
Abstract
Cu(In,Ga)Se-2/CdS/ZnO solar cells need at least 10(18) cm(-2) electrons of an energy of 1 MeV to degrade in their power conversion efficiency by more than 25%. Even after such high irradiation doses, annealing of the irradiat ed solar cells at temperatures between 130 and 160 degreesC leads to a full recovery of the device performance. Isochronal annealing experiments unvei l that the annealing of the irradiation-induced defects has an activation e nergy of 1.05 eV. (C) 2001 American Institute of Physics.