Epitaxial growth of ferroelectric SrBi2Ta2O9 thin films of mixed (100) and(116) orientation on SrLaGaO4(110)

Epitaxial ferroelectric SrBi2Ta2O9 (SBT) thin films with a well-defined cry stallographic orientation state consisting of a mix of (100) and (116) orie ntations have been grown on (110)-oriented SrLaGaO4 (SLG) substrates by pul sed laser deposition. X-ray pole figure analyses revealed the presence of t wo epitaxial orientation relationships, viz. SBT(100)parallel to SLG(110); SBT[001]parallel to SLG[001] and SBT(116)parallel to SLG(110); SBT[(1) over bar 10]parallel to SLG[001]. By calculating the integrated intensity of ce rtain x-ray diffraction peaks, it was established that the crystallinity an d the in-plane orientation of the (100) and (116) orientation are maximized at a substrate temperature of 775 and 788 degreesC, respectively, and that the volume fraction of the (100) orientation at about 770 degreesC reached about 60%.(C) 2001 American Institute of Physics.