Light-emitting nanostructures formed by intense, ultrafast electronic excitation in silicon (100)

The intense, ultrafast electronic excitation of clean silicon (100)-(2x1) s urfaces leads to the formation of silicon nanostructures embedded in silico n, which photoluminescence at similar to 560 nm wavelength (similar to2 eV band gap). The silicon surfaces were irradiated with slow, highly charged i ons (e.g., Xe44+ and Au53+) to produce the electronic excitation. The obser vation of excitonic features in the luminescence is particularly unusual fo r silicon nanostructures. The temperature dependence and the measurement of the triplet-singlet splitting of the emission strongly support the exciton ic assignment. (C) 2001 American Institute of Physics.