Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency

Tunnel-regenerated multiple-active-region (TRMAR) light-emitting diodes (LE Ds) with high quantum efficiency and high brightness have been proposed and fabricated. We have proved experimentally that the efficiency of the elect rical luminescence and the on-axis luminous intensity of such TRMAR LEDs sc aled linearly approximately with the number of the active regions. The on-a xis luminous intensity of such TRMAR LEDs with only 3 mum GaP current sprea ding layer have exceeded 5 cd at 20 mA dc operation under 15 degrees packag e. The high-quantum-efficiency and high-brightness LEDs under the low injec tion level were realized. (C) 2001 American Institute of Physics.