Two-dimensional simulation of polymer field-effect transistor

Authors
Tessler, N Roichman, Y
Citation
N. Tessler et Y. Roichman, Two-dimensional simulation of polymer field-effect transistor, APPL PHYS L, 79(18), 2001, pp. 2987-2989
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
18
Year of publication
2001
Pages
2987 - 2989
Database
ISI
SICI code
0003-6951(20011029)79:18<2987:TSOPFT>2.0.ZU;2-5
Abstract
A two-dimensional simulation of intrinsic top-contact field-effect transist or is presented. The simulated structure is unique to organic transistors a nd hence is most relevant. By time resolving the operation of such a transi stor, the mechanisms underlying its operation are resolved. The effect of t his device configuration on the measured "intrinsic" material properties is also discussed and shown to explain previously reported features. (C) 2001 American Institute of Physics.