Observation of narrow-band Si L-edge Cerenkov radiation generated by 5 MeVelectrons

Authors
Knulst, W Luiten, OJ van der Wiel, MJ Verhoeven, J
Citation
W. Knulst et al., Observation of narrow-band Si L-edge Cerenkov radiation generated by 5 MeVelectrons, APPL PHYS L, 79(18), 2001, pp. 2999-3001
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
18
Year of publication
2001
Pages
2999 - 3001
Database
ISI
SICI code
0003-6951(20011029)79:18<2999:OONSLC>2.0.ZU;2-H
Abstract
Narrow-band Cerenkov radiation at 99.7 eV has been generated by 5 MeV elect rons in a silicon foil, with a yield similar to 1x10(-3) photon/electron. T hese measurements demonstrate the feasibility of a compact, narrow-band, an d intense soft x-ray source based on small electron accelerators. The obser ved yield and dependence of the photon spectrum on emission angle are in ag reement with theoretical predictions for Cerenkov radiation based on refrac tive index data of silicon. (C) 2001 American Institute of Physics.