Recording at a nanometer-scale on 3-phenyl-1-ureidonitrile (CPU) thin films
is successfully conducted using scanning tunneling microscopy (STM) in amb
ient conditions. Recorded marks are written when a series of voltage pulses
are applied between the STM tip and the freshly cleaned highly ordered pyr
olytic graphite (HOPG) substrates. STM current-voltage (I-V) curves of the
films show that the electric resistance in the recorded regions is much low
er than that in the unrecorded regions. Standard four-point probe measureme
nts indicate that the transition time of the transient conductance is 6 ns.
It is suggested ;that CPU organic thin films have potential in the applica
tion of future data storage. (C) 2001 Elsevier Science B.V. All rights rese
rved.