Nanometer-scale recording with transition time at nanosecond

Citation
Dx. Shi et al., Nanometer-scale recording with transition time at nanosecond, APPL SURF S, 182(1-2), 2001, pp. 64-68
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
182
Issue
1-2
Year of publication
2001
Pages
64 - 68
Database
ISI
SICI code
0169-4332(20011005)182:1-2<64:NRWTTA>2.0.ZU;2-J
Abstract
Recording at a nanometer-scale on 3-phenyl-1-ureidonitrile (CPU) thin films is successfully conducted using scanning tunneling microscopy (STM) in amb ient conditions. Recorded marks are written when a series of voltage pulses are applied between the STM tip and the freshly cleaned highly ordered pyr olytic graphite (HOPG) substrates. STM current-voltage (I-V) curves of the films show that the electric resistance in the recorded regions is much low er than that in the unrecorded regions. Standard four-point probe measureme nts indicate that the transition time of the transient conductance is 6 ns. It is suggested ;that CPU organic thin films have potential in the applica tion of future data storage. (C) 2001 Elsevier Science B.V. All rights rese rved.