Increasing the photoluminescence intensity of Ge islands by chemical etching

Self-assembled Ge islands were grown on Si(100) substrate by Si2H6-Ge molec ular beam epitaxy. After being subjected to chemical etching, it is found t hat the photoluminescence from the etched Ge islands became more intense an d shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical et ching can be a way to change the luminescence property of the as-deposited islands.