GaInNAs/GaAs multiple-quantum well resonant-cavity-enhanced photodetectorsat 1.3 mu m

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced photode tector (RCF-PD) operated at a wavelength of 1.3 mum with the full width at half maximum of 4nm has been demonstrated. The GaInNAs RCE - PD was grown b y molecular beam epitaxy using a homemade ion-removed dc plasma cell as a n itrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temper ature, which is very beneficial for applications in long-wavelength absorpt ion devices. For a 100 mum diameter RCE-PD, the dark current is 20 and 32 p A at biases of 0 and 6 V, respectively, and the breakdown voltage is - 18 V . The measured 3 dB bandwidth is 308 MHz, which is limited by the resistanc e of p-type distributed Bragg reflector mirror. The tunable wavelength in a range of 18 nm with the angle of incident light was observed.