Native point defect states in ZnO

The native point defect states in ZnO have been calculated by using a full- potential linear muffin-tin orbital method. The results show that Zn vacanc y and O interstitial produce the shallow acceptor levels above the valence band. The O vacancy produces a deep donor level, while Zn interstitial prod uces a shallow donor level, both below the conduction band. The Zn intersti tial is the main factor which induces the native n-type conductivity in ZnO .