Structure and photoluminescence of InGaAs quantum dots formed on an InAlAswetting layer

We have developed a new self-assembled quantum dot system where InGaAs dots are formed on an InAlAs wetting layer and embedded in the GaAs matrix. The structure is realized by special sample designation and demonstrated by lo w-temperature photoluminescence measurements. In contrast to the traditiona l InAs/GaAs quantum dots dominated by the ensemble effect, the temperature dependence of the photoluminescence of such a quantum dot structure behaves as decoupled quantum dots. This can be attributed to the enhanced potentia l confinement for the dots provided by a higher-energy barrier in the wetti ng layer.