Single source MOCVD techniques were used to prepare perovskite films w
ith metallic conductivity (CaRuO3, LaNiO3, La0.5Sr0.5CoO3 and (La, Pr)
(0.7)(Sr, Ca)(0.3)MnO3). Structural and electrical properties of the e
pitaxial layers on the coherent substrates are dose to that of the fil
ms grown by pulsed laser deposition and magnetron sputtering. Peculiar
ities of the growth occur on the worse matched substrates, such as a m
ixture of two orientations, each aligned in the plane of the interface
(LaNiO3/MgO) and variant structures in the films on yttrium stabilize
d zirconia. X-ray diffraction of the films indicates pseudocubic latti
ce for all R(1-x)A(x)MO(3) films in spite of the distortions in the bu
lk material. The dependence of metal-insulator transition in R(1-x)A(x
)MnO(3) on the nature of R and A and film-substrate lattice mismatch w
as studied.