Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector

The growth, fabrication, and characterization of a normal-incidence, high-t emperature, mid-wavelength infrared, InAs-GaAs vertical quantum-dot infrare d photodetector with a single Al0.3Ga0.7As current-blocking barrier are des cribed and discussed in detail. A specific detectivity approximate to3 x 10 (9) cmHz(1/2)/W is measured for a detector temperature of 100 K at a bias o f 0.2 V. Detector characteristics are measured for temperatures as high as 150 K. The superior low bias performance of the vertical quantum-dot infrar ed photodetector ensures its compatibility with commercially available sili con read-out circuits necessary for the fabrication of a focal plane array.