Reliability of microwave SiGe/Si heterojunction bipolar transistors

Authors
Ma, ZQ Bhattacharya, P Rieh, JS Ponchak, GE Alterovitz, SA Croke, ET
Citation
Zq. Ma et al., Reliability of microwave SiGe/Si heterojunction bipolar transistors, IEEE MICR W, 11(10), 2001, pp. 401-403
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
ISSN journal
15311309 → ACNP
Volume
11
Issue
10
Year of publication
2001
Pages
401 - 403
Database
ISI
SICI code
1531-1309(200110)11:10<401:ROMSHB>2.0.ZU;2-T
Abstract
The degradation behavior of NPN Si/SiGe/Si heterojunction bipolar transisto rs, grown by solid-source molecular beam epitaxy (MBE), has been studied by accelerated lifetime testing at different ambient temperatures. The degrad ations of the de current gain and the microwave performance of the devices are explained in terms of recombination enhanced impurity diffusion (REED) of boron atoms from the base region and the subsequent formation of parasit ic energy barriers at the base-emitter and base-collector junctions.