Analytical model for the ohmic-side interstrip resistance of double-sided silicon microstrip detectors

A compact, analytical model is derived for the n-side interstrip resistance of double-sided silicon microstrip detectors, allowing for fast and accura te prediction of the minimum p-stop (or p-spray) implant dose ensuring adeq uate interstrip isolation. The basic idea on which the proposed model relie s is that the portion of the detector between two adjacent n-strips can eff ectively be reduced to an equivalent n-channel MOSFET. The interstrip resis tance can be evaluated as the output resistance of this equivalent MOSFET u sing standard SPICE-like models. The influence of radiation-induced oxide c harge and p-stop (or p-spray) voltage can be accounted for by simply includ ing, in the threshold voltage expression, the induced flat-band voltage shi ft and body-effect term, respectively.