Radiation damage of standard and oxygenated silicon diodes irradiated by 16-MeV and 27-MeV protons

The effects of irradiation by 16- and 27-MeV protons on standard and oxygen ated silicon diodes, processed by different technologies, have been investi gated. The acceptor creation rate beta can be lower for standard diodes tha n for state-of-the art oxygenated devices, suggesting that the role of oxyg en is more complex than expected and must be folded with the technology of the fabrication process. In addition, we show the inaccuracy of the beta no rmalization by the nonionizing energy loss factor not only for oxygenated d iodes but also for standard nonoxygenated devices.