Oxidation simulation of heavily phosphorus-doped silicon based on the interfacial silicon emission model

Silicon oxidation of heavily phosphorus-doped substrates is simulated based on the interfacial silicon emission model. We assume that double negativel y charged vacancies (V2-) from the substrates reduce the interfacial silico n emission, which governs the oxidation rate at the interface. The simulati on is done by reducing the rate of Si-atom emission according to the concen tration of V2- estimated from the carrier concentration of the substrates. In addition, the equilibrium concentration of oxygen in the oxide is increa sed with increasing P concentration to fit the experimental oxide thickness .