Magnetic characteristic of Mn+ ion implanted GaN epilayer

Nanoscale ferromagnets (GaMn) with the implantation of Mn+ ions have been i ncorporated into unintentionally doped (n-type) GaN epilayers grown on sapp hire substrate by molecular beam epitaxy (MBE). Energy dispersive X-ray (ED X) spectrometry, atomic force and magnetic force microscopy (AFM and MFM) a re used to characterize the GaMn precipitates which form within the GaN epi layer. MFM images reveal nanoscale ferromagnets (GaMn), and a small magneti c hysteresis loop indicates that there are ferromagnetic particles in our G aN:Mn layer involving the paramagnetic property and is measured by supercon ducting quantum interference device (SQUID) magnetometer.