Gamma-ray induced deep electron traps in GaInP

Authors
Sung, WJ Liu, TY Yang, SL Huang, KF Tseng, TY Chou, FI Wei, YY Wu, YR
Citation
Wj. Sung et al., Gamma-ray induced deep electron traps in GaInP, JPN J A P 1, 40(9A), 2001, pp. 5306-5307
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
40
Issue
9A
Year of publication
2001
Pages
5306 - 5307
Database
ISI
SICI code
Abstract
Deep electron traps created by gamma-ray irradiation of Au/GaInP Schottky d iodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Three distinc t deep electron traps, G1, G2 and G3, were observed in the irradiated GaInP samples. According to the analysis of trap properties in various samples. trap G1 is verified as a bulk defect located at 0.13 eV below the conductio n band, while trap G2 and G3 are interface states originated from the junct ions of Au/Te-doped GaInP contacts.