In situ observation of native oxide growth on a Si(100) surface using grazing incidence X-ray reflectivity and Fourier transform infrared spectrometer

It is well known that native oxide on hydrogen-terminated Si hardly grows i n a drying atmosphere. We have developed an in situ observation system usin g grazing incidence X-ray reflectivity (GIXR) and Fourier transform infrare d spectrometer (FTIR). In this study, we investigated the native oxide grow th on hydrogen-terminated p-Si (100) in an actual drying atmosphere, which was prepared to 70 ppm H2O under atmospheric pressure at room temperature.