Microchannel epitaxy of GaAs from parallel and nonparallel seeds

We have investigated the lateral coalescence in microchannel epitaxy (NICE) of GaAs from parallel and nonparallel seeds by liquid phase epitaxy (LPE). It was shown that when parallel seeds were employed, the lateral coalescen ce of the NICE islands started from two points and then preceded inward, bu t when nonparallel seeds were employed, the lateral coalescence started fro m one point. The coalesced NICE islands were etched by molten KOH and it wa s found that when the parallel seeds were employed, dislocation was generat ed at the last coalesced point in the coalesced region. However, dislocatio n did not appear in the coalesced region obtained from nonparallel seeds. I t is concluded that by employing NICE from nonparallel seeds, one can avoid the formations of dislocations in the coalesced region.