Quaternary AlInGaN multiple quantum wells for ultraviolet light emitting diodes

We report on a novel pulsed atomic layer epitaxy (PALE) growth technique fo r quaternary AlInGaN films for ultraviolet optoelectronics applications. Us ing the PALE approach, quaternary AlInGaN/AlInGaN multiple quantum wells (M QWs) were successfully gown over sapphire substrates. These were characteri zed using X-ray diffraction, atomic force microscopy, and photoluminescence to establish structural and optical quality. Incorporating the PALE grown quaternary MQWs as the active layer we also demonstrated ultraviolet electr oluminescence at 343 nm with an output power up to 0.12 mW at room temperat ure.