Novel ridge-type InGaN multiple-quantum-well laser diodes fabricated by selective area re-growth on n-GaN substrates

A novel ridge structure fabricated by selective-area epitaxial re-growth is proposed for InGaN multiple-quantum-well (MQW) laser diodes (LDs). This te chnique is capable of precisely controlling the active ridge width and heig ht, thus enabling stable single tran sverse-mode operation. Together with a backside n-contact on a low-dislocation-density GaN substrate, this struct ure provides high productivity and performance for GaN-based blue-violet LD s. A stable fundamental transverse mode up to 40 mW was demonstrated for th e certain range of ridge dimensions. The minimum aspect ratio of the far-fi eld patterns (FFPs) was about 2.1 in the fabricated ridge-type InGaN MQW LD s.