Influence of oxygen on formation of hollow voids at SiC/Si interface

Influences of oxygen on the formation of hollow voids at the SiC/Si interfa ce are studied by electric current heating of the Si substrate in the tempe rature range of 650 degreesC to 1000 degreesC. By changing the thickness of the SiC film and the concentration of residual oxygen in the Si substrate, we found that the formation of hollow voids depends on the concentration o f residual oxygen, and the formation reaction of hollow voids is enhanced a round the oxygen-related defects in the Si substrate.